Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1592-1595
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薄栅介质TDDB效应

刘红侠 and 郝跃

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Key words: TDDB, 击穿机理, 击穿电荷, 可靠性表征

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1592-1595
      刘红侠, 郝跃. 薄栅介质TDDB效应[J]. 半导体学报(英文版), 2001, 22(12): 1592-1595.
      Citation:
      刘红侠, 郝跃. 薄栅介质TDDB效应[J]. 半导体学报(英文版), 2001, 22(12): 1592-1595.
      shu

      • Received Date: 2015-08-20

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