Chin. J. Semicond. > 1989, Volume 10 > Issue 12 > 952-954
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硅中Mo-B络合物的电荷分布

吴汲安 , 周洁 and 张大仁

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(12): 952-954
      吴汲安, 周洁, 张大仁. 硅中Mo-B络合物的电荷分布[J]. 半导体学报(英文版), 1989, 10(12): 952-954.
      Citation:
      吴汲安, 周洁, 张大仁. 硅中Mo-B络合物的电荷分布[J]. 半导体学报(英文版), 1989, 10(12): 952-954.
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      • Received Date: 2015-08-19

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