Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1411-1415
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电子从不同晶向Si隧穿快速热氮化SiO_2膜的电流增强及模型解释

冯文修 , 陈蒲生 , 田浦延 and 刘剑

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Key words: 电子隧穿, 快速热氮化, SiO2膜, 晶向硅

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1411-1415
      冯文修, 陈蒲生, 田浦延, 刘剑. 电子从不同晶向Si隧穿快速热氮化SiO_2膜的电流增强及模型解释[J]. 半导体学报(英文版), 2001, 22(11): 1411-1415.
      Citation:
      冯文修, 陈蒲生, 田浦延, 刘剑. 电子从不同晶向Si隧穿快速热氮化SiO_2膜的电流增强及模型解释[J]. 半导体学报(英文版), 2001, 22(11): 1411-1415.
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      • Received Date: 2015-08-20

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