Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1416-1419
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硅单晶生长中氩气流动对氧碳含量的影响

任丙彦 , 张志成 , 刘彩池 , 郝秋燕 and 王猛

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Key words: CZSi, 氩气流, 数值模拟, 氧碳含量

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1416-1419
      任丙彦, 张志成, 刘彩池, 郝秋燕, 王猛. 硅单晶生长中氩气流动对氧碳含量的影响[J]. 半导体学报(英文版), 2001, 22(11): 1416-1419.
      Citation:
      任丙彦, 张志成, 刘彩池, 郝秋燕, 王猛. 硅单晶生长中氩气流动对氧碳含量的影响[J]. 半导体学报(英文版), 2001, 22(11): 1416-1419.
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      • Received Date: 2015-08-20

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