Chin. J. Semicond. > 1995, Volume 16 > Issue 1 > 13-18
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用高分辨电子能量损失谱和紫外光电子谱研究多孔硅的电子结构

郝平海，侯晓远，丁训民，贺仲卿，蔡卫中，王迅

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(1): 13-18
      郝平海，侯晓远，丁训民，贺仲卿，蔡卫中，王迅. 用高分辨电子能量损失谱和紫外光电子谱研究多孔硅的电子结构[J]. 半导体学报(英文版), 1995, 16(1): 13-18.
      Citation:
      郝平海，侯晓远，丁训民，贺仲卿，蔡卫中，王迅. 用高分辨电子能量损失谱和紫外光电子谱研究多孔硅的电子结构[J]. 半导体学报(英文版), 1995, 16(1): 13-18.
      shu

      • Received Date: 2015-08-19

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