| Citation: |
Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin, Zhao Liancheng. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Journal of Semiconductors, 2003, 24(S1): 74-77.
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Yin J H, Cai W, Wang M G, Zheng Y F, Li M C, Wang P L, Zhao L C. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Chin. J. Semicond., 2003, 24(S1): 74.
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Surface and Interface Characteristic of Sputtered Nanometer PtSi Film
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Abstract
The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of Ptsi films are studied by AFM and -RTEM. The results show that the technology conditions influence the interface structure and surface morphology of Ptsi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.-
Keywords:
- PtSi film,
- surface morphology,
- interface structure
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References
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Proportional views
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