Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 74-77

Surface and Interface Characteristic of Sputtered Nanometer PtSi Film

Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin and Zhao Liancheng

+ Author Affiliations

PDF

Abstract: The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of Ptsi films are studied by AFM and -RTEM. The results show that the technology conditions influence the interface structure and surface morphology of Ptsi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.

Key words: PtSi film surface morphology interface structure

1

Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature

Rui Huang, Zhiyong Wang, Hui Li, Qing Wang, Yecai Guo, et al.

Journal of Semiconductors, 2023, 44(5): 052102. doi: 10.1088/1674-4926/44/5/052102

2

Morphology and crystalline property of an AlN single crystal grown on AlN seed

Li Zhang, Haitao Qi, Hongjuan Cheng, Yuezeng Shi, Zhanpin Lai, et al.

Journal of Semiconductors, 2021, 42(5): 052101. doi: 10.1088/1674-4926/42/5/052101

3

Surface passivation of perovskite film for efficient solar cells

Yang (Michael) Yang

Journal of Semiconductors, 2019, 40(4): 040204. doi: 10.1088/1674-4926/40/4/040204

4

A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

Shumei Lai, Danfeng Mao, Zhiwei Huang, Yihong Xu, Songyan Chen, et al.

Journal of Semiconductors, 2016, 37(9): 093004. doi: 10.1088/1674-4926/37/9/093004

5

Influence of thickness on strain state and surface morphology of AlN grown by HVPE

Maosong Sun, Jicai Zhang, Jun Huang, Xuewei Li, Linjun Wang, et al.

Journal of Semiconductors, 2016, 37(12): 123001. doi: 10.1088/1674-4926/37/12/123001

6

Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

Yongye Liang, Kyungsoo Jang, S. Velumani, Cam Phu Thi Nguyen, Junsin Yi, et al.

Journal of Semiconductors, 2015, 36(2): 024007. doi: 10.1088/1674-4926/36/2/024007

7

Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT

Devashish Pandey, T.R. Lenka

Journal of Semiconductors, 2014, 35(10): 104001. doi: 10.1088/1674-4926/35/10/104001

8

Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells

Xinliang Chen, Congbo Yan, Xinhua Geng, Dekun Zhang, Changchun Wei, et al.

Journal of Semiconductors, 2014, 35(4): 043002. doi: 10.1088/1674-4926/35/4/043002

9

Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication

V.K. Dwivedi, P. Srivastava, G. Vijaya Prakash

Journal of Semiconductors, 2013, 34(3): 033001. doi: 10.1088/1674-4926/34/3/033001

10

Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC

Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, et al.

Journal of Semiconductors, 2011, 32(7): 072002. doi: 10.1088/1674-4926/32/7/072002

11

Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

Tao Tao, Zhang Zhao, Liu Lian, Su Hui, Xie Zili, et al.

Journal of Semiconductors, 2011, 32(8): 083002. doi: 10.1088/1674-4926/32/8/083002

12

An A/D interface based on Σ Δ modulator for thermal vacuum sensor ASICs

Li Jinfeng, Tang Zhen'an

Journal of Semiconductors, 2010, 31(7): 075008. doi: 10.1088/1674-4926/31/7/075008

13

Characterization of vanadyl phthalocyanine based surface-type capacitive humidity sensors

Fakhra Aziz, M. H. Sayyad, Khassan S. Karimov, M. Saleem, Zubair Ahmad, et al.

Journal of Semiconductors, 2010, 31(11): 114002. doi: 10.1088/1674-4926/31/11/114002

14

Surface morphology of [11-20] a-plane GaN growth by MOCVD on [1-102] r-plane sapphire

Xu Shengrui, Hao Yue, Duan Huantao, Zhang Jincheng, Zhang Jinfeng, et al.

Journal of Semiconductors, 2009, 30(4): 043003. doi: 10.1088/1674-4926/30/4/043003

15

Monte Carlo Simulation for the Surface Morphology of Anisotropic Etching of Crystalline Silicon

Xing Yan, Zhu Peng, Yi Hong, Tang Wencheng

Journal of Semiconductors, 2008, 29(10): 2027-2033.

16

Improvement of Surface Morphology of RF MBE Grown (0001) GaN via In-Protected Growth Interruption Modulation

Zhong Fei, Qiu Kai, Li Xinhua, Yin Zhijun, Ji Changjian, et al.

Chinese Journal of Semiconductors , 2007, 28(8): 1221-1225.

17

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, et al.

Chinese Journal of Semiconductors , 2006, 27(2): 235-238.

18

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia

Chinese Journal of Semiconductors , 2006, 27(2): 229-234.

19

AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films

Chen Jinhuo, Wang Yongshun, Zhu Haihua, Hu Jiaxing, Zhang Fujia, et al.

Chinese Journal of Semiconductors , 2006, 27(8): 1360-1366.

20

Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD

Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, et al.

Chinese Journal of Semiconductors , 2003, 24(3): 409-412.

  • Search

    Advanced Search >>

    GET CITATION

    Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin, Zhao Liancheng. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Journal of Semiconductors, 2003, 24(S1): 74-77.
    Yin J H, Cai W, Wang M G, Zheng Y F, Li M C, Wang P L, Zhao L C. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Chin. J. Semicond., 2003, 24(S1): 74.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2086 Times PDF downloads: 534 Times Cited by: 0 Times

    History

    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin, Zhao Liancheng. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Journal of Semiconductors, 2003, 24(S1): 74-77. ****Yin J H, Cai W, Wang M G, Zheng Y F, Li M C, Wang P L, Zhao L C. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Chin. J. Semicond., 2003, 24(S1): 74.
      Citation:
      Yin Jinghua, Cai Wei, Wang Mingguang, Zheng Yufeng, Li Meicheng, Wang Peilin, Zhao Liancheng. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Journal of Semiconductors, 2003, 24(S1): 74-77. ****
      Yin J H, Cai W, Wang M G, Zheng Y F, Li M C, Wang P L, Zhao L C. Surface and Interface Characteristic of Sputtered Nanometer PtSi Film[J]. Chin. J. Semicond., 2003, 24(S1): 74.

      Surface and Interface Characteristic of Sputtered Nanometer PtSi Film

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return