| Citation: |
Ma Zhiyong, Wang Xiaoliang, Hu Guoxin, Xiao Hongling, Wang Cuimei, Ran Junxue, Li Jianping. Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer[J]. Journal of Semiconductors, 2007, 28(S1): 3944-3943.
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Ma Z Y, Wang X L, Hu G X, Xiao H L, Wang C M, Ran J X, Li J P. Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer[J]. Chin. J. Semicond., 2007, 28(S1): 3944.
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Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer
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Abstract
：A1GaN/AlN/GaN high electron mobility transistor (HEMT) structures with compositionally step-graded AIGaN barrier layer were grown on sapphire substrates by metalorganic chemical vapor deposition.High crystal quality and good sur‘ face morphology of the HEMT structures are confirmed by triple.crystal X-ray diffraction(TCXRD)and atomic force microscopy(AFM)measurements.The full width at half maximum of the GaN(0002)peak iS 4.567 from the rocking curve. AFM measurements reveal a smooth A1GaN surface with a root-mean-square roughness of 0.159nm for a scan area of 5um× 5tLm.Pendell6sung fringes are observed beside AIGaN(0002)diffraction peaks,indicating good crystalline quality and a coherent interface.-
Keywords:
- AIGaN/AlN/GaN,
- Pendell6sung fringes,
- MOCVD,
- HEMT
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References
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Proportional views
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