Citation: |
Hu Guang, Zhang Kai, Ye Yun, Wu Wen, Liu Chan, Gu Haoshuang. Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell[J]. Journal of Semiconductors, 2007, 28(S1): 591-595.
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Hu G, Zhang K, Ye Y, Wu W, Liu C, Gu H S. Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell[J]. Chin. J. Semicond., 2007, 28(S1): 591.
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Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell
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Abstract
Film bulk acoustic resoqator was fabricated in backside air-gap structure using silicon bulk micromachining tech. tuque,with aluminum nitride films as piezoelectric material.Measurement results show that the AlN films deposited under optimized sputtering condition,are featured in (002) preferred orientation and well.textured columnar structure. The fashioned air-gap, characterized by scanning microscope,is confirmed with smooth surface on the back and good anisotropy.The fabricated resonator IS measured using a network analyzer,and finally achieves a resonant frequency of 2.537GHz,effective electromechanical coupling coefficient 3.75%,series quality and parallel quality of 101.8 and 79.7, respectively. -
References
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Proportional views