| Citation: |
Liu Wenbao, Sun Xian, Wang Xiaolan, Zhang Shuang, Liu Zongshun, Zhao Degang, Yang Hui. Characteristics of Metal-Semiconductor-Metal Photodetectors Based on GaN[J]. Journal of Semiconductors, 2007, 28(S1): 588-590.
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Liu W B, Sun X, Wang X L, Zhang S, Liu Z S, Zhao D G, Yang H. Characteristics of Metal-Semiconductor-Metal Photodetectors Based on GaN[J]. Chin. J. Semicond., 2007, 28(S1): 588.
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Characteristics of Metal-Semiconductor-Metal Photodetectors Based on GaN
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Abstract
Metal-Semiconductor-Metal type(MSM)Dhotodetectors were fabricated on unintentional doped GaN epitaxial films which were grown on sapphire substrate by metal organic chemical vapor deposition(MOCVD).Their characteristics of dark current and photo response were investigated.It was found that the dark current degraded after voltage ageing，and there was an abnormal reverse current under small voltage which can be restored with white light exposure.In addition，a peak photoconductive response around 368tim was observed，and it can be quenched under 808nm laser irradiation.Accord. ing to a trap model the mechanism behind was supposed.-
Keywords:
- GaN,
- MSM photodetectors,
- dark current,
- photo response,
- trap model
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References
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Proportional views
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