Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology

Zhu Kehan; Yu Zongguang; Dong Shurong; Han Yan

J. Semicond. > 2008, Volume 29 > Issue 11 > 2164-2168

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Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology

Zhu Kehan, Yu Zongguang, Dong Shurong and Han Yan

+ Author Affiliations

Abstract: A novel SCR on-chip ESD device is proposed to protect IC chips against ESD stressing in two opposite directions.The triggering voltages of four types of dual direction SCRs (DDSCR) are compared and analyzed.pMOS or nMOS are embedded into the structures to adjust their triggering voltages.Both MOSFETs embedded DDSCRs have tunable triggering voltage,low DC leakage (~pA),and fast turn on speed snapback I-V characteristics without latch-up problem.It achieves high ESD performance of ~94V/μm.The new ESD protection devices are area efficient and can reduce the parasitic effects significantly.

Key words: electrostatic discharge, dual direction SCR, snapback

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Zhu Kehan, Yu Zongguang, Dong Shurong, Han Yan. Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology[J]. Journal of Semiconductors, 2008, 29(11): 2164-2168.

Zhu K H, Yu Z G, Dong S R, Han Y. Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology[J]. J. Semicond., 2008, 29(11): 2164.

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Received: 18 August 2015 Revised: 24 July 2008 Online: Published: 01 November 2008

A novel SCR on-chip ESD device is proposed to protect IC chips against ESD stressing in two opposite directions.The triggering voltages of four types of dual direction SCRs (DDSCR) are compared and analyzed.pMOS or nMOS are embedded into the structures to adjust their triggering voltages.Both MOSFETs embedded DDSCRs have tunable triggering voltage,low DC leakage (~pA),and fast turn on speed snapback I-V characteristics without latch-up problem.It achieves high ESD performance of ~94V/μm.The new ESD protection devices are area efficient and can reduce the parasitic effects significantly.

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology

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