Chin. J. Semicond. > 1989, Volume 10 > Issue 12 > 892-903
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折射率缓变波导层分别限制单量子阱半导体激光器的模式分析

郭长志 and 陈水莲

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(12): 892-903
      郭长志, 陈水莲. 折射率缓变波导层分别限制单量子阱半导体激光器的模式分析[J]. 半导体学报(英文版), 1989, 10(12): 892-903.
      Citation:
      郭长志, 陈水莲. 折射率缓变波导层分别限制单量子阱半导体激光器的模式分析[J]. 半导体学报(英文版), 1989, 10(12): 892-903.
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      • Received Date: 2015-08-19

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