| Citation: |
Huang Xiaolan, Wu Dexin, Zhang Yaohui, Li Ke, Wang Lixin. Research of the Critical Parameters of Power RF LDMOS[J]. Journal of Semiconductors, 2006, 27(S1): 266-270.
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Huang X L, Wu D X, Zhang Y H, Li K, Wang L X. Research of the Critical Parameters of Power RF LDMOS[J]. Chin. J. Semicond., 2006, 27(13): 266.
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Research of the Critical Parameters of Power RF LDMOS
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Abstract
Breakdown voltage,cutoff frequency fT and Ron are key parameters of power RF LDMOS devices.The measures of enhancing these characteristics are usually conflicting and restricting each other.The relations of these parameters are studied and the optimizing schemes are discussed.The progress and achievement in the field are also presented.-
Keywords:
- :RF LDMOS,
- breakdown voltage,
- cut-off frequency,
- polysilicon oxidation
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References
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Proportional views
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