| Citation: |
Liu Jian, Li Chenzhan, Wei Ke, He Zhijing, Liu Guoguo, Zheng Yingkui, Liu Xinyu, Wu Dexin. Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact[J]. Journal of Semiconductors, 2006, 27(S1): 262-265.
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Liu J, Li C Z, Wei K, He Z J, Liu G G, Zheng Y K, Liu X Y, Wu D X. Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact[J]. Chin. J. Semicond., 2006, 27(13): 262.
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Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact
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Abstract
The process of Ti/Al/Ti/Au ohmic contact of AlGaN/GaN HEMTs were studied systematically.After the study of annealing process,we got the ohmic contact ratio of 1E-7Ω·cm2.We also analyzed the mechanism of ohmic contact of AlGaN/GaN HEMTs.Based on the optimization of device fabrication,we developed high performance AlGaN/GaN HEMTs.The device with 40μm gate width has reached a maximum extrinsic transconductance of 250mS/mm,and the current density of the device with 0.8mm gate width is 1.07A/mm(Vg=0.5V) at Vds=30V.The output power of 0.8mm gate width device is 32.5dBm(1.6W) at 8GHz,the output power density is 2.14W/mm and power gain 12.7dB.-
Keywords:
- AlGaN/GaN HEMT,
- ohmic contact,
- transconductance,
- output power density
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References
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Proportional views
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