| Citation: |
Liao Jingning, Guo Chunsheng, Liu Pengfei, Wu Yuehua, Li Zhiguo. Reliability Model of Thin Oxide CMOS[J]. Journal of Semiconductors, 2006, 27(S1): 257-261.
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Liao J N, Guo C S, Liu P F, Wu Y H, Li Z G. Reliability Model of Thin Oxide CMOS[J]. Chin. J. Semicond., 2006, 27(13): 257.
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Reliability Model of Thin Oxide CMOS
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Abstract
This paper describes two models that are related to the defect of gate oxide and one thermal resistance model of semiconductor devices to evaluate chip life.With CMOS IC technology scaling,the conventional TDDB model cannot provide the necessary accuracy for calculation and prediction.And the reliability of thin gate oxides is also one of the most important problems in CMOS integrated circuits.Thus the development of CMOS TDDB model is very important.-
Keywords:
- TDDB,
- hot carrier,
- thermal resistance,
- junction temperature
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References
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Proportional views
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