| Citation: |
Liu Biwei, Hao Yue, Chen Shuming. Multiple Node Upset in SEU Hardened Storage Cells[J]. Journal of Semiconductors, 2008, 29(2): 244-250.
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Liu B W, Hao Y, Chen S M. Multiple Node Upset in SEU Hardened Storage Cells[J]. J. Semicond., 2008, 29(2): 244.
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Multiple Node Upset in SEU Hardened Storage Cells
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Abstract
We study the problem of multiple node upset (MNU) using three-dimensional device simulation.The results show the transient floating node and charge lateral diffusion are the key reasons for MNU.We compare the MNU with multiple bit upset (MBU), and find that their characteristics are different.Methods to avoid MNU are also discussed.-
Keywords:
- multiple node upset,
- hardened cell,
- charge collection
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References
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Proportional views
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