Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 745-747
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n-Ge中单峰型反常霍尔效应的理论研究

姜坤 and 姜伟

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 745-747
      姜坤, 姜伟. n-Ge中单峰型反常霍尔效应的理论研究[J]. 半导体学报(英文版), 1999, 20(9): 745-747.
      Citation:
      姜坤, 姜伟. n-Ge中单峰型反常霍尔效应的理论研究[J]. 半导体学报(英文版), 1999, 20(9): 745-747.
      shu

      • Received Date: 2015-08-20

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