Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 737-744

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Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心

王海龙 , 司俊杰 and 封松林

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 737-744
      王海龙, 司俊杰, 封松林. Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心[J]. 半导体学报(英文版), 1999, 20(9): 737-744.
      Citation:
      王海龙, 司俊杰, 封松林. Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心[J]. 半导体学报(英文版), 1999, 20(9): 737-744.
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      • Received Date: 2015-08-20

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