Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1320-1324
|

CONTENTS

PD SOI NMOSFET翘曲效应的温度模型

张海鹏 , 魏同立 , 冯耀兰 , 姚炜 and 宋安飞

+ Author Affiliations

PDF

Key words: PD SOI NMOSFET, 翘曲效应, 温度解析模型, 动态平衡

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2386 Times PDF downloads: 1120 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1320-1324
      张海鹏, 魏同立, 冯耀兰, 姚炜, 宋安飞. PD SOI NMOSFET翘曲效应的温度模型[J]. 半导体学报(英文版), 2001, 22(10): 1320-1324.
      Citation:
      张海鹏, 魏同立, 冯耀兰, 姚炜, 宋安飞. PD SOI NMOSFET翘曲效应的温度模型[J]. 半导体学报(英文版), 2001, 22(10): 1320-1324.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return