Chin. J. Semicond. > 1993, Volume 14 > Issue 12 > 728-733
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不同应力条件下亚微米MOSFET's热载流子退变特性实验研究

程玉华 , 李瑞伟 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 December 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(12): 728-733
      程玉华, 李瑞伟, 李志坚. 不同应力条件下亚微米MOSFET's热载流子退变特性实验研究[J]. 半导体学报(英文版), 1993, 14(12): 728-733.
      Citation:
      程玉华, 李瑞伟, 李志坚. 不同应力条件下亚微米MOSFET's热载流子退变特性实验研究[J]. 半导体学报(英文版), 1993, 14(12): 728-733.
      shu

      • Received Date: 2015-08-20

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