Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1116-1120

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

Wang Xiaoliang , Wang Cuimei , Hu Guoxin , Wang Junxi , Liu Xinyu , Liu Jian , Ran Junxue , Qian He , Zeng Yiping and and Li Jinmin

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Key words: HEMT, GaN, 2DEG, RF-MBE, power device

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Received: 19 August 2015 Revised: Online: Published: 01 June 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(6): 1116-1120

Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Wang Junxi, Liu Xinyu, Liu Jian, Ran Junxue, Qian He, Zeng Yiping, and Li Jinmin. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content[J]. 半导体学报(英文版), 2005, 26(6): 1116-1120.

Citation:

Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Wang Junxi, Liu Xinyu, Liu Jian, Ran Junxue, Qian He, Zeng Yiping, and Li Jinmin. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content[J]. 半导体学报(英文版), 2005, 26(6): 1116-1120.

Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Wang Junxi, Liu Xinyu, Liu Jian, Ran Junxue, Qian He, Zeng Yiping, and Li Jinmin. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content[J]. 半导体学报(英文版), 2005, 26(6): 1116-1120.

Citation:

Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Wang Junxi, Liu Xinyu, Liu Jian, Ran Junxue, Qian He, Zeng Yiping, and Li Jinmin. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content[J]. 半导体学报(英文版), 2005, 26(6): 1116-1120.

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