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Volume 26, Issue 6, Jun 2005
Table of Content
CONTENTS
Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects
Sun Xiuping，Feng Kecheng，Li Chao, Zhang Hongxia，and Fei Yunjie
Chin. J. Semicond.  2005, 26(6): 1073-1076
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Analysis and Optimum Design of Differential Inductors Using Distributed Capacitance Model
Jian Hongyan, Tang Zhangwen, He Jie, and Min Hao
Chin. J. Semicond.  2005, 26(6): 1077-1082
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A Solenoid-Type Inductor Fabricated by MEMS Technique
Gao Xiaoyu, Zhou Yong, Wang Xining, Lei Chong, Chen Ji’an，and Zhao Xiaolin
Chin. J. Semicond.  2005, 26(6): 1083-1086
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A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam
Zhou Zhen, Han Qin, Du Yun, Yang Xiaohong, Wu Ronghan, Huang Yongqing, and Ren Xiaomin
Chin. J. Semicond.  2005, 26(6): 1087-1093
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Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual- Waveguide Spot-Size Converter Output
Hou Lianping, Wang Wei, Feng Wen，Zhu Hongliang, Zhou Fan, Wang Lufeng, and Bian Jing
Chin. J. Semicond.  2005, 26(6): 1094-1099
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Butt-Joint Monolithically Integrated DFB-LD/EA-MD Light Source for 10Gbit/s Transmission
Li Baoxia, Hu Xiaohua, Zhu Hongliang, Wang Baojun, Bian Jing, Zhao Lingjuan，and Wang Wei
Chin. J. Semicond.  2005, 26(6): 1100-1103
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Optimization of Plasma Etching Parameters and Mask for Silica Optical Waveguides
Zhou Libing, Liu Wen, and Wu Guoyang
Chin. J. Semicond.  2005, 26(6): 1104-1110
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A Compact Ka-Band PHEMT MMIC Voltage Controlled Oscillator
Yu, Wen，Sun, Xiaowei，Qian, Rong，and, Zhang, Yimen
Chin. J. Semicond.  2005, 26(6): 1111-1115
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RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content
Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Wang Junxi, Liu Xinyu, Liu Jian, Ran Junxue, Qian He, Zeng Yiping, and Li Jinmin
Chin. J. Semicond.  2005, 26(6): 1116-1120
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A VHF PECVD Micro-Crystalline Silicon Bottom Gate TFT with a Thin Incubation Layer
Li Juan, Zhao Shuyun, Liu Jianping, Wu Chunya, Zhang Xiaodan, Meng Zhiguo, Zhao Ying，Xiong Shaozhen，Zhang Lizhu，and Jang Jin
Chin. J. Semicond.  2005, 26(6): 1121-1125
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A High Performance InP HEMT with Saw-Toothed Source and Drain
Zhang Haiying, Liu Xunchun, Yin Junjian, Chen Liqiang, Wang Runmei, Niu Jiebin, and Liu Ming
Chin. J. Semicond.  2005, 26(6): 1126-1128
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A 12bit 300MHz Current-Steering CMOS D/A Converter
Ni Weining, Geng Xueyang，and Shi Yin
Chin. J. Semicond.  2005, 26(6): 1129-1134
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非对称耦合双量子点中激子的动力学行为
刘灿德, 苏希玉, 刘玉申, 张会云
Chin. J. Semicond.  2005, 26(6): 1135-1139
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深能级杂质Zn对n型硅半导体的补偿特性
蔡志军, 巴维真, 陈朝阳, 崔志明, 丛秀云
Chin. J. Semicond.  2005, 26(6): 1140-1143
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多晶CdS/CdTe异质结界面的能带偏移
黄代绘, 吴海霞, 李卫, 冯良桓
Chin. J. Semicond.  2005, 26(6): 1144-1148
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GSMBE外延生长SGOI材料的退火行为
刘超, 高兴国, 李建平, 曾一平, 李晋闽
Chin. J. Semicond.  2005, 26(6): 1149-1153
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氧化Au/Ni/p-GaN欧姆接触形成的机理
胡成余, 秦志新, 冯振兴, 陈志忠, 杨华, 杨志坚, 于彤军, 胡晓东, 姚淑德, 张国义
Chin. J. Semicond.  2005, 26(6): 1154-1158
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掺Si对AlGaInP/GaInP多量子阱发光性能的影响
李述体, 范广涵, 周天明, 郑树文, 王浩, 郭志友, 孙慧卿
Chin. J. Semicond.  2005, 26(6): 1159-1163
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弱硼掺杂补偿对氢化微晶硅薄膜制备与特性的影响
黄君凯, 杨恢东
Chin. J. Semicond.  2005, 26(6): 1164-1168
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蓝宝石衬底上单晶InN外延膜的RF-MBE生长
肖红领, 王晓亮, 张南红, 王军喜, 刘宏新, 韩勤, 曾一平, 李晋闽
Chin. J. Semicond.  2005, 26(6): 1169-1172
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光电薄膜SnS的制备及其性能
程树英, 黄赐昌, 陈岩清, 陈国南
Chin. J. Semicond.  2005, 26(6): 1173-1177
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GaAs Microtips Grown by Selective LPE for SNOM Sensors
Zhang Hongzhi, Hu Lizhong, Sun Xiaojuan, Wang Zhijun, Liang Xiuping
Chin. J. Semicond.  2005, 26(6): 1178-1181
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Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.

Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.
适用于高品质射频集成电感的多孔硅新型衬底制备技术
周毅, 杨利, 张国艳, 黄如
Chin. J. Semicond.  2005, 26(6): 1182-1186
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应用于深亚微米DSOI器件的埋氧层的制备
陶凯, 董业民, 易万兵, 王曦, 邹世昌
Chin. J. Semicond.  2005, 26(6): 1187-1190
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一种基于非平衡态格林函数的准三维FinFET模型
邵雪, 余志平
Chin. J. Semicond.  2005, 26(6): 1191-1196
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Ni(Zr)Si薄膜热稳定性及其肖特基势垒二极管的电学特性
黄伟, 卢建政, 张利春, 高玉芝, 金海岩
Chin. J. Semicond.  2005, 26(6): 1197-1202
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退火过程中RP缺陷模型及数值模拟
励晔, 夏建新, 安娜
Chin. J. Semicond.  2005, 26(6): 1203-1207
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光电耦合器件g-r噪声模型
包军林, 庄奕琪, 杜磊, 吴勇, 马仲发
Chin. J. Semicond.  2005, 26(6): 1208-1213
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基于MEMS技术新型硅磁敏三极管负阻-振荡特性
赵晓锋, 温殿忠
Chin. J. Semicond.  2005, 26(6): 1214-1217
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电阻栅结构负阻异质结双极晶体管
郭维廉, 齐海涛, 张世林, 钟鸣, 梁惠来, 毛陆虹, 宋瑞良, 胡海洋
Chin. J. Semicond.  2005, 26(6): 1218-1223
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基于扣除法的半导体激光器高频响应仿真新方法
张尚剑, 刘超, 伞海生, 祝宁华
Chin. J. Semicond.  2005, 26(6): 1224-1228
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表面粘连效应对接触式微开关接触电阻的影响
黄见秋, 黄庆安
Chin. J. Semicond.  2005, 26(6): 1229-1233
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折叠内插模数转换器分析及实现
陈诚, 毛静文, 王照钢, 任俊彦, 闵昊
Chin. J. Semicond.  2005, 26(6): 1234-1238
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用低温金属电镀技术制造与封装的惯性微型电学开关
马薇, Yitshak, Zohar, 王文
Chin. J. Semicond.  2005, 26(6): 1239-1244
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灌封胶封装对高量程MEMS加速度计动态性能的影响
蒋玉齐, 程迎军, 张鲲, 李昕欣, 罗乐
Chin. J. Semicond.  2005, 26(6): 1245-1249
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具有片上数字控制频率调谐的9MHz有源RC滤波器
吴恩德, 姚金科, 王志华
Chin. J. Semicond.  2005, 26(6): 1250-1254
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在SOI基上设计实现D/A驱动的高压LDMOS开关电路
雷宇, 方健, 张波, 李肇基
Chin. J. Semicond.  2005, 26(6): 1255-1258
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IC参数成品率全局优化的映射距离最小化算法
荆明娥, 李康, 王俊平, 郝跃
Chin. J. Semicond.  2005, 26(6): 1259-1263
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一种用于SRAM快速仿真的模型
张锋, 周玉梅, 黄令仪
Chin. J. Semicond.  2005, 26(6): 1264-1268
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注氮工艺对SOI材料抗辐照性能的影响
张恩霞, 钱聪, 张正选, 王曦, 张国强, 李宁, 郑中山, 刘忠立
Chin. J. Semicond.  2005, 26(6): 1269-1272
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芯片叠层封装的失效分析和热应力模拟
顾靖, 王珺, 陆震, 俞宏坤, 肖斐
Chin. J. Semicond.  2005, 26(6): 1273-1277
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