Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1159-1163
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掺Si对AlGaInP/GaInP多量子阱发光性能的影响

李述体 , 范广涵 , 周天明 , 郑树文 , 王浩 , 郭志友 and 孙慧卿

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Key words: 多量子阱, AlGaInP, MOCVD, Si掺杂, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1159-1163
      李述体, 范广涵, 周天明, 郑树文, 王浩, 郭志友, 孙慧卿. 掺Si对AlGaInP/GaInP多量子阱发光性能的影响[J]. 半导体学报(英文版), 2005, 26(6): 1159-1163.
      Citation:
      李述体, 范广涵, 周天明, 郑树文, 王浩, 郭志友, 孙慧卿. 掺Si对AlGaInP/GaInP多量子阱发光性能的影响[J]. 半导体学报(英文版), 2005, 26(6): 1159-1163.
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      • Received Date: 2015-08-19

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