Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1214-1217
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基于MEMS技术新型硅磁敏三极管负阻-振荡特性

赵晓锋 and 温殿忠

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Key words: MEMS, S型负阻-振荡特性, 硅磁敏三极管,  雪崩倍增效应

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1214-1217
      赵晓锋, 温殿忠. 基于MEMS技术新型硅磁敏三极管负阻-振荡特性[J]. 半导体学报(英文版), 2005, 26(6): 1214-1217.
      Citation:
      赵晓锋, 温殿忠. 基于MEMS技术新型硅磁敏三极管负阻-振荡特性[J]. 半导体学报(英文版), 2005, 26(6): 1214-1217.
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      • Received Date: 2015-08-19

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