Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1214-1217
|

CONTENTS

基于MEMS技术新型硅磁敏三极管负阻-振荡特性

赵晓锋 and 温殿忠

+ Author Affiliations

PDF

Key words: MEMS, S型负阻-振荡特性, 硅磁敏三极管,  雪崩倍增效应

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2776 Times PDF downloads: 1586 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1214-1217
      赵晓锋, 温殿忠. 基于MEMS技术新型硅磁敏三极管负阻-振荡特性[J]. 半导体学报(英文版), 2005, 26(6): 1214-1217.
      Citation:
      赵晓锋, 温殿忠. 基于MEMS技术新型硅磁敏三极管负阻-振荡特性[J]. 半导体学报(英文版), 2005, 26(6): 1214-1217.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return