Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1191-1196
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一种基于非平衡态格林函数的准三维FinFET模型

邵雪 and 余志平

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Key words: 非平衡态格林函数, 量子力学效应, 超薄沟道, 三维, 数值模拟, FinFET

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1191-1196
      邵雪, 余志平. 一种基于非平衡态格林函数的准三维FinFET模型[J]. 半导体学报(英文版), 2005, 26(6): 1191-1196.
      Citation:
      邵雪, 余志平. 一种基于非平衡态格林函数的准三维FinFET模型[J]. 半导体学报(英文版), 2005, 26(6): 1191-1196.
      shu

      • Received Date: 2015-08-19

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