Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1187-1190
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应用于深亚微米DSOI器件的埋氧层的制备

陶凯 , 董业民 , 易万兵 , 王曦 and 邹世昌

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Key words: DSOI, SIMOX, 埋氧层

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1187-1190
      陶凯, 董业民, 易万兵, 王曦, 邹世昌. 应用于深亚微米DSOI器件的埋氧层的制备[J]. 半导体学报(英文版), 2005, 26(6): 1187-1190.
      Citation:
      陶凯, 董业民, 易万兵, 王曦, 邹世昌. 应用于深亚微米DSOI器件的埋氧层的制备[J]. 半导体学报(英文版), 2005, 26(6): 1187-1190.
      shu

      • Received Date: 2015-08-19

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