Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1182-1186
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适用于高品质射频集成电感的多孔硅新型衬底制备技术

周毅 , 杨利 , 张国艳 and 黄如

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Key words: 射频集成电路, 多孔硅, 集成电感, 品质因子

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1182-1186
      周毅, 杨利, 张国艳, 黄如. 适用于高品质射频集成电感的多孔硅新型衬底制备技术[J]. 半导体学报(英文版), 2005, 26(6): 1182-1186.
      Citation:
      周毅, 杨利, 张国艳, 黄如. 适用于高品质射频集成电感的多孔硅新型衬底制备技术[J]. 半导体学报(英文版), 2005, 26(6): 1182-1186.
      shu

      • Received Date: 2015-08-19

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