GaAs Microtips Grown by Selective LPE for SNOM Sensors

Zhang Hongzhi; Hu Lizhong; Sun Xiaojuan; Wang Zhijun; Liang Xiuping

Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1178-1181

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GaAs Microtips Grown by Selective LPE for SNOM Sensors

Zhang Hongzhi, Hu Lizhong, Sun Xiaojuan, Wang Zhijun and Liang Xiuping

+ Author Affiliations

Abstract: Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.

Key words: selective LPE, microtips, SNOM

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Zhang Hongzhi, Hu Lizhong, Sun Xiaojuan, Wang Zhijun, Liang Xiuping. GaAs Microtips Grown by Selective LPE for SNOM Sensors[J]. Journal of Semiconductors, 2005, 26(6): 1178-1181.

Zhang H Z, Hu L Z, Sun X J, Wang Z J, Liang X P. GaAs Microtips Grown by Selective LPE for SNOM Sensors[J]. Chin. J. Semicond., 2005, 26(6): 1178.

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Received: 18 August 2015 Revised: Online: Published: 01 June 2005

Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.

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