Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1144-1148
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多晶CdS/CdTe异质结界面的能带偏移

黄代绘 , 吴海霞 , 李卫 and 冯良桓

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Key words: 真空沉积, CdS/CdTe异质结, 价带偏移, 导带偏移

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1144-1148
      黄代绘, 吴海霞, 李卫, 冯良桓. 多晶CdS/CdTe异质结界面的能带偏移[J]. 半导体学报(英文版), 2005, 26(6): 1144-1148.
      Citation:
      黄代绘, 吴海霞, 李卫, 冯良桓. 多晶CdS/CdTe异质结界面的能带偏移[J]. 半导体学报(英文版), 2005, 26(6): 1144-1148.
      shu

      • Received Date: 2015-08-19

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