Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1140-1143
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深能级杂质Zn对n型硅半导体的补偿特性

蔡志军 , 巴维真 , 陈朝阳 , 崔志明 and 丛秀云

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Key words: 深能级杂质, 费米能级, 多数载流子, 补偿度

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1140-1143
      蔡志军, 巴维真, 陈朝阳, 崔志明, 丛秀云. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报(英文版), 2005, 26(6): 1140-1143.
      Citation:
      蔡志军, 巴维真, 陈朝阳, 崔志明, 丛秀云. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报(英文版), 2005, 26(6): 1140-1143.
      shu

      • Received Date: 2015-08-19

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