Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1140-1143
|

CONTENTS

深能级杂质Zn对n型硅半导体的补偿特性

蔡志军 , 巴维真 , 陈朝阳 , 崔志明 and 丛秀云

+ Author Affiliations

PDF

Key words: 深能级杂质, 费米能级, 多数载流子, 补偿度

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2571 Times PDF downloads: 1797 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1140-1143
      蔡志军, 巴维真, 陈朝阳, 崔志明, 丛秀云. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报(英文版), 2005, 26(6): 1140-1143.
      Citation:
      蔡志军, 巴维真, 陈朝阳, 崔志明, 丛秀云. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报(英文版), 2005, 26(6): 1140-1143.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return