Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1154-1158
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CONTENTS

氧化Au/Ni/p-GaN欧姆接触形成的机理

胡成余 , 秦志新 , 冯振兴 , 陈志忠 , 杨华 , 杨志坚 , 于彤军 , 胡晓东 , 姚淑德 and 张国义

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Key words: p型氮化镓, 镍/金, 比接触电阻, 同步辐射, 卢瑟福背散射

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1154-1158
      胡成余, 秦志新, 冯振兴, 陈志忠, 杨华, 杨志坚, 于彤军, 胡晓东, 姚淑德, 张国义. 氧化Au/Ni/p-GaN欧姆接触形成的机理[J]. 半导体学报(英文版), 2005, 26(6): 1154-1158.
      Citation:
      胡成余, 秦志新, 冯振兴, 陈志忠, 杨华, 杨志坚, 于彤军, 胡晓东, 姚淑德, 张国义. 氧化Au/Ni/p-GaN欧姆接触形成的机理[J]. 半导体学报(英文版), 2005, 26(6): 1154-1158.
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      • Received Date: 2015-08-19

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