Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1149-1153
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GSMBE外延生长SGOI材料的退火行为

刘超 , 高兴国 , 李建平 , 曾一平 and 李晋闽

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Key words: MBE, 绝缘体上硅锗, 退火行为

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1149-1153
      刘超, 高兴国, 李建平, 曾一平, 李晋闽. GSMBE外延生长SGOI材料的退火行为[J]. 半导体学报(英文版), 2005, 26(6): 1149-1153.
      Citation:
      刘超, 高兴国, 李建平, 曾一平, 李晋闽. GSMBE外延生长SGOI材料的退火行为[J]. 半导体学报(英文版), 2005, 26(6): 1149-1153.
      shu

      • Received Date: 2015-08-19

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