| Citation: |
Zhang Hongzhi, Hu Lizhong, Sun Xiaojuan, Wang Zhijun, Liang Xiuping. GaAs Microtips Grown by Selective LPE for SNOM Sensors[J]. Journal of Semiconductors, 2005, 26(6): 1178-1181.
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Zhang H Z, Hu L Z, Sun X J, Wang Z J, Liang X P. GaAs Microtips Grown by Selective LPE for SNOM Sensors[J]. Chin. J. Semicond., 2005, 26(6): 1178.
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GaAs Microtips Grown by Selective LPE for SNOM Sensors
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Abstract
Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.-
Keywords:
- selective LPE,
- microtips,
- SNOM
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References
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Proportional views
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