Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1269-1272
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注氮工艺对SOI材料抗辐照性能的影响

张恩霞 , 钱聪 , 张正选 , 王曦 , 张国强 , 李宁 , 郑中山 and 刘忠立

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Key words: 氧氮共注, SIMON, SOI, 离子注入

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1269-1272
      张恩霞, 钱聪, 张正选, 王曦, 张国强, 李宁, 郑中山, 刘忠立. 注氮工艺对SOI材料抗辐照性能的影响[J]. 半导体学报(英文版), 2005, 26(6): 1269-1272.
      Citation:
      张恩霞, 钱聪, 张正选, 王曦, 张国强, 李宁, 郑中山, 刘忠立. 注氮工艺对SOI材料抗辐照性能的影响[J]. 半导体学报(英文版), 2005, 26(6): 1269-1272.
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      • Received Date: 2015-08-19

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