Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1203-1207
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退火过程中RP缺陷模型及数值模拟

励晔 , 夏建新 and 安娜

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Key words: 束缚能, 析出, RP缺陷, 离子注入, 退火

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1203-1207
      励晔, 夏建新, 安娜. 退火过程中RP缺陷模型及数值模拟[J]. 半导体学报(英文版), 2005, 26(6): 1203-1207.
      Citation:
      励晔, 夏建新, 安娜. 退火过程中RP缺陷模型及数值模拟[J]. 半导体学报(英文版), 2005, 26(6): 1203-1207.
      shu

      • Received Date: 2015-08-19

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