Chin. J. Semicond. > 2005, Volume 26 > Issue 6 > 1164-1168
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弱硼掺杂补偿对氢化微晶硅薄膜制备与特性的影响

黄君凯 and 杨恢东

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Key words: 甚高频等离子体增强化学气相沉积, 氢化微晶硅薄膜, 弱硼掺杂补偿

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(6): 1164-1168
      黄君凯, 杨恢东. 弱硼掺杂补偿对氢化微晶硅薄膜制备与特性的影响[J]. 半导体学报(英文版), 2005, 26(6): 1164-1168.
      Citation:
      黄君凯, 杨恢东. 弱硼掺杂补偿对氢化微晶硅薄膜制备与特性的影响[J]. 半导体学报(英文版), 2005, 26(6): 1164-1168.
      shu

      • Received Date: 2015-08-19

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