A High Performance InP HEMT with Saw-Toothed Source and Drain

Zhang Haiying , Liu Xunchun , Yin Junjian , Chen Liqiang , Wang Runmei , Niu Jiebin and and Liu Ming

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Key words: InP, HEMT, MMIC

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Received: 19 August 2015 Revised: Online: Published: 01 June 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(6): 1126-1128

Zhang Haiying, Liu Xunchun, Yin Junjian, Chen Liqiang, Wang Runmei, Niu Jiebin, and Liu Ming. A High Performance InP HEMT with Saw-Toothed Source and Drain[J]. 半导体学报(英文版), 2005, 26(6): 1126-1128.

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Zhang Haiying, Liu Xunchun, Yin Junjian, Chen Liqiang, Wang Runmei, Niu Jiebin, and Liu Ming. A High Performance InP HEMT with Saw-Toothed Source and Drain[J]. 半导体学报(英文版), 2005, 26(6): 1126-1128.