Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 44-50
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MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究

廉鹏 , 邹德恕 , 高国 , 殷涛 , 陈昌华 , 徐遵图 , 陈建新 , 沈光地 , 曹青 , 马骁宇 and 陈良惠

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Key words: GaAs/AlGaAs, MOCVD, 碳掺杂

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 44-50
      廉鹏, 邹德恕, 高国, 殷涛, 陈昌华, 徐遵图, 陈建新, 沈光地, 曹青, 马骁宇, 陈良惠. MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究[J]. 半导体学报(英文版), 2000, 21(1): 44-50.
      Citation:
      廉鹏, 邹德恕, 高国, 殷涛, 陈昌华, 徐遵图, 陈建新, 沈光地, 曹青, 马骁宇, 陈良惠. MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究[J]. 半导体学报(英文版), 2000, 21(1): 44-50.
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      • Received Date: 2015-08-20

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