Journal of Semiconductors

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Volume 21, Issue 1, Jan 2000

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CONTENTS

C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

马玉涛, 刘理天, 李志坚

Chin. J. Semicond. 2000, 21(1): 1-7

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 1.

马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. Chin. J. Semicond., 2000, 21(1): 1..Export: BibTex EndNote

马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. Chin. J. Semicond., 2000, 21(1): 1...

Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy

李毅, 易新建, 蔡丽萍

Chin. J. Semicond. 2000, 21(1): 8-11

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 8.

李毅, 易新建, 蔡丽萍. Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy[J]. Chin. J. Semicond., 2000, 21(1): 8..Export: BibTex EndNote

李毅, 易新建, 蔡丽萍. Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy[J]. Chin. J. Semicond., 2000, 21(1): 8...

Optim ization of a 1×8 Arrayed-Waveguide Grating Multi/Dem ultiplexer

欧海燕, 雷红兵, 杨沁清, 王启明, 胡雄伟

Chin. J. Semicond. 2000, 21(1): 12-17

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 12.

欧海燕, 雷红兵, 杨沁清, 王启明, 胡雄伟. Optim ization of a 1×8 Arrayed-Waveguide Grating Multi/Dem ultiplexer[J]. Chin. J. Semicond., 2000, 21(1): 12..Export: BibTex EndNote

欧海燕, 雷红兵, 杨沁清, 王启明, 胡雄伟. Optim ization of a 1×8 Arrayed-Waveguide Grating Multi/Dem ultiplexer[J]. Chin. J. Semicond., 2000, 21(1): 12...

Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明

Chin. J. Semicond. 2000, 21(1): 18-21

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 18.

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. Chin. J. Semicond., 2000, 21(1): 18..Export: BibTex EndNote

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. Chin. J. Semicond., 2000, 21(1): 18...

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

王杏华, 宋爱民, 程文超, 李国华, 李承芳, 李月霞, 谭平恒

Chin. J. Semicond. 2000, 21(1): 22-27

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 22.

王杏华, 宋爱民, 程文超, 李国华, 李承芳, 李月霞, 谭平恒. Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays[J]. Chin. J. Semicond., 2000, 21(1): 22..Export: BibTex EndNote

王杏华, 宋爱民, 程文超, 李国华, 李承芳, 李月霞, 谭平恒. Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays[J]. Chin. J. Semicond., 2000, 21(1): 22...

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

程澎, 高俊华, 康学军, 林世鸣, 张光斌, 刘世安, 胡国新

Chin. J. Semicond. 2000, 21(1): 28-32

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 28.

程澎, 高俊华, 康学军, 林世鸣, 张光斌, 刘世安, 胡国新. Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers[J]. Chin. J. Semicond., 2000, 21(1): 28..Export: BibTex EndNote

程澎, 高俊华, 康学军, 林世鸣, 张光斌, 刘世安, 胡国新. Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers[J]. Chin. J. Semicond., 2000, 21(1): 28...

金属平面半导体量子阱微腔自发发射

赵红东, 张存善, 周革, 沈光地, 张以谟

Chin. J. Semicond. 2000, 21(1): 33-37

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 33.

赵红东, 张存善, 周革, 沈光地, 张以谟. 金属平面半导体量子阱微腔自发发射[J]. Chin. J. Semicond., 2000, 21(1): 33..Export: BibTex EndNote

赵红东, 张存善, 周革, 沈光地, 张以谟. 金属平面半导体量子阱微腔自发发射[J]. Chin. J. Semicond., 2000, 21(1): 33...

经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性

刘小兵, 熊祖洪, 史向华, 袁帅, 廖良生

Chin. J. Semicond. 2000, 21(1): 38-43

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 38.

刘小兵, 熊祖洪, 史向华, 袁帅, 廖良生. 经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性[J]. Chin. J. Semicond., 2000, 21(1): 38..Export: BibTex EndNote

刘小兵, 熊祖洪, 史向华, 袁帅, 廖良生. 经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性[J]. Chin. J. Semicond., 2000, 21(1): 38...

MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究

廉鹏, 邹德恕, 高国, 殷涛, 陈昌华, 徐遵图, 陈建新, 沈光地, 曹青, 马骁宇, 陈良惠

Chin. J. Semicond. 2000, 21(1): 44-50

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 44.

廉鹏, 邹德恕, 高国, 殷涛, 陈昌华, 徐遵图, 陈建新, 沈光地, 曹青, 马骁宇, 陈良惠. MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究[J]. Chin. J. Semicond., 2000, 21(1): 44..Export: BibTex EndNote

廉鹏, 邹德恕, 高国, 殷涛, 陈昌华, 徐遵图, 陈建新, 沈光地, 曹青, 马骁宇, 陈良惠. MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究[J]. Chin. J. Semicond., 2000, 21(1): 44...

Gaδ掺杂ZnSe超晶格的稳恒光电导效应

胡古今, 张雷, 戴宁, 陈良尧

Chin. J. Semicond. 2000, 21(1): 51-55

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 51.

胡古今, 张雷, 戴宁, 陈良尧. Gaδ掺杂ZnSe超晶格的稳恒光电导效应[J]. Chin. J. Semicond., 2000, 21(1): 51..Export: BibTex EndNote

胡古今, 张雷, 戴宁, 陈良尧. Gaδ掺杂ZnSe超晶格的稳恒光电导效应[J]. Chin. J. Semicond., 2000, 21(1): 51...

高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析

吴杰, 夏冠群, 束为民, 顾伟东, 张兴宏

Chin. J. Semicond. 2000, 21(1): 56-63

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 56.

吴杰, 夏冠群, 束为民, 顾伟东, 张兴宏. 高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析[J]. Chin. J. Semicond., 2000, 21(1): 56..Export: BibTex EndNote

吴杰, 夏冠群, 束为民, 顾伟东, 张兴宏. 高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析[J]. Chin. J. Semicond., 2000, 21(1): 56...

半绝缘非掺GaAs材料制备的MESFETs背栅效应

刘汝萍, 夏冠群, 赵建龙, 翁建华, 张美圣, 郝幼申

Chin. J. Semicond. 2000, 21(1): 64-68

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 64.

刘汝萍, 夏冠群, 赵建龙, 翁建华, 张美圣, 郝幼申. 半绝缘非掺GaAs材料制备的MESFETs背栅效应[J]. Chin. J. Semicond., 2000, 21(1): 64..Export: BibTex EndNote

刘汝萍, 夏冠群, 赵建龙, 翁建华, 张美圣, 郝幼申. 半绝缘非掺GaAs材料制备的MESFETs背栅效应[J]. Chin. J. Semicond., 2000, 21(1): 64...

一种新的可编程、可扩展的Hamming神经网络

林谷, 石秉学

Chin. J. Semicond. 2000, 21(1): 69-75

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 69.

林谷, 石秉学. 一种新的可编程、可扩展的Hamming神经网络[J]. Chin. J. Semicond., 2000, 21(1): 69..Export: BibTex EndNote

林谷, 石秉学. 一种新的可编程、可扩展的Hamming神经网络[J]. Chin. J. Semicond., 2000, 21(1): 69...

有机高亮度黄光发光二极管

黄劲松, 谢志元, 杨开霞, 李传南, 侯晶莹, 刘式墉, 南金, 戴国瑞

Chin. J. Semicond. 2000, 21(1): 76-78

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 76.

黄劲松, 谢志元, 杨开霞, 李传南, 侯晶莹, 刘式墉, 南金, 戴国瑞. 有机高亮度黄光发光二极管[J]. Chin. J. Semicond., 2000, 21(1): 76..Export: BibTex EndNote

黄劲松, 谢志元, 杨开霞, 李传南, 侯晶莹, 刘式墉, 南金, 戴国瑞. 有机高亮度黄光发光二极管[J]. Chin. J. Semicond., 2000, 21(1): 76...

Zn_(1-x)Cd_xSe/ZnSe量子限制Stark效应光调制器

唐九耀, 川上养一, 藤田茂夫

Chin. J. Semicond. 2000, 21(1): 79-84

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 79.

唐九耀, 川上养一, 藤田茂夫. Zn_(1-x)Cd_xSe/ZnSe量子限制Stark效应光调制器[J]. Chin. J. Semicond., 2000, 21(1): 79..Export: BibTex EndNote

唐九耀, 川上养一, 藤田茂夫. Zn_(1-x)Cd_xSe/ZnSe量子限制Stark效应光调制器[J]. Chin. J. Semicond., 2000, 21(1): 79...

增镀光学薄膜改善DFB激光器的光谱特性

毕可奎, 汪孝杰, 朱洪亮

Chin. J. Semicond. 2000, 21(1): 85-88

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 85.

毕可奎, 汪孝杰, 朱洪亮. 增镀光学薄膜改善DFB激光器的光谱特性[J]. Chin. J. Semicond., 2000, 21(1): 85..Export: BibTex EndNote

毕可奎, 汪孝杰, 朱洪亮. 增镀光学薄膜改善DFB激光器的光谱特性[J]. Chin. J. Semicond., 2000, 21(1): 85...

用调制光谱研究半导体体材料及微结构的非线性极化率

王若桢, 田强, 江德生

Chin. J. Semicond. 2000, 21(1): 89-92

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 89.

王若桢, 田强, 江德生. 用调制光谱研究半导体体材料及微结构的非线性极化率[J]. Chin. J. Semicond., 2000, 21(1): 89..Export: BibTex EndNote

王若桢, 田强, 江德生. 用调制光谱研究半导体体材料及微结构的非线性极化率[J]. Chin. J. Semicond., 2000, 21(1): 89...

158MHz GaAs声表面波固定延迟线的研制

李洪芹, 夏冠群

Chin. J. Semicond. 2000, 21(1): 93-96

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 93.

李洪芹, 夏冠群. 158MHz GaAs声表面波固定延迟线的研制[J]. Chin. J. Semicond., 2000, 21(1): 93..Export: BibTex EndNote

李洪芹, 夏冠群. 158MHz GaAs声表面波固定延迟线的研制[J]. Chin. J. Semicond., 2000, 21(1): 93...

超薄基区SiGe HBT电流传输模型

李垚, 孔德义, 魏敬和, 许居衍

Chin. J. Semicond. 2000, 21(1): 97-101

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 97.

李垚, 孔德义, 魏敬和, 许居衍. 超薄基区SiGe HBT电流传输模型[J]. Chin. J. Semicond., 2000, 21(1): 97..Export: BibTex EndNote

李垚, 孔德义, 魏敬和, 许居衍. 超薄基区SiGe HBT电流传输模型[J]. Chin. J. Semicond., 2000, 21(1): 97...

157W准连续AlGaAs/GaAs激光二极管线列阵

方高瞻, 肖建伟, 马骁宇, 谭满清, 刘宗顺, 刘素平, 胡长虹, 鲁琳, 李秀芳, 王梅

Chin. J. Semicond. 2000, 21(1): 102-104

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(1): 102.

方高瞻, 肖建伟, 马骁宇, 谭满清, 刘宗顺, 刘素平, 胡长虹, 鲁琳, 李秀芳, 王梅. 157W准连续AlGaAs/GaAs激光二极管线列阵[J]. Chin. J. Semicond., 2000, 21(1): 102..Export: BibTex EndNote

方高瞻, 肖建伟, 马骁宇, 谭满清, 刘宗顺, 刘素平, 胡长虹, 鲁琳, 李秀芳, 王梅. 157W准连续AlGaAs/GaAs激光二极管线列阵[J]. Chin. J. Semicond., 2000, 21(1): 102...

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