Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy

李毅 , 易新建 and 蔡丽萍

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Received: 20 August 2015 Revised: Online: Published: 01 January 2000

Article Navigation > Journal of Semiconductors > 2000 > 21(1): 8-11

李毅, 易新建, 蔡丽萍. Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy[J]. 半导体学报(英文版), 2000, 21(1): 8-11.

Citation:

李毅, 易新建, 蔡丽萍. Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy[J]. 半导体学报(英文版), 2000, 21(1): 8-11.

李毅, 易新建, 蔡丽萍. Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy[J]. 半导体学报(英文版), 2000, 21(1): 8-11.

Citation:

李毅, 易新建, 蔡丽萍. Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X-ray Photoelectron Spectroscopy[J]. 半导体学报(英文版), 2000, 21(1): 8-11.

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