Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 1-7

CONTENTS

C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

马玉涛 , 刘理天 and 李志坚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2306 Times PDF downloads: 1250 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 1-7
      马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. 半导体学报(英文版), 2000, 21(1): 1-7.
      Citation:
      马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. 半导体学报(英文版), 2000, 21(1): 1-7.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return