Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 1-7

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C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

马玉涛 , 刘理天 and 李志坚

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    马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. 半导体学报(英文版), 2000, 21(1): 1-7.
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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 1-7
      马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. 半导体学报(英文版), 2000, 21(1): 1-7.
      Citation:
      马玉涛, 刘理天, 李志坚. C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects[J]. 半导体学报(英文版), 2000, 21(1): 1-7.
      shu

      • Received Date: 2015-08-20

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