Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 64-68
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半绝缘非掺GaAs材料制备的MESFETs背栅效应

刘汝萍 , 夏冠群 , 赵建龙 , 翁建华 , 张美圣 and 郝幼申

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Key words: MESFET, 背栅效应, GaAs

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 64-68
      刘汝萍, 夏冠群, 赵建龙, 翁建华, 张美圣, 郝幼申. 半绝缘非掺GaAs材料制备的MESFETs背栅效应[J]. 半导体学报(英文版), 2000, 21(1): 64-68.
      Citation:
      刘汝萍, 夏冠群, 赵建龙, 翁建华, 张美圣, 郝幼申. 半绝缘非掺GaAs材料制备的MESFETs背栅效应[J]. 半导体学报(英文版), 2000, 21(1): 64-68.
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      • Received Date: 2015-08-20

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