Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 18-21

Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing

李成 , 杨沁清 , 王红杰 , 罗丽萍 , 成步文 , 余金中 and 王启明

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Received: 20 August 2015 Revised: Online: Published: 01 January 2000

Article Navigation > Journal of Semiconductors > 2000 > 21(1): 18-21

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. 半导体学报(英文版), 2000, 21(1): 18-21.

Citation:

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. 半导体学报(英文版), 2000, 21(1): 18-21.

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. 半导体学报(英文版), 2000, 21(1): 18-21.

Citation:

李成, 杨沁清, 王红杰, 罗丽萍, 成步文, 余金中, 王启明. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. 半导体学报(英文版), 2000, 21(1): 18-21.

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