Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 56-63
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CONTENTS

高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析

吴杰 , 夏冠群 , 束为民 , 顾伟东 and 张兴宏

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Key words: 电流增益, HBT, AlGaInP/GaAs, 高温

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 56-63
      吴杰, 夏冠群, 束为民, 顾伟东, 张兴宏. 高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析[J]. 半导体学报(英文版), 2000, 21(1): 56-63.
      Citation:
      吴杰, 夏冠群, 束为民, 顾伟东, 张兴宏. 高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析[J]. 半导体学报(英文版), 2000, 21(1): 56-63.
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      • Received Date: 2015-08-20

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