Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 97-101
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超薄基区SiGe HBT电流传输模型

李垚 , 孔德义 , 魏敬和 and 许居衍

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Key words: HBT, 电流传输, SiGe

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 97-101
      李垚, 孔德义, 魏敬和, 许居衍. 超薄基区SiGe HBT电流传输模型[J]. 半导体学报(英文版), 2000, 21(1): 97-101.
      Citation:
      李垚, 孔德义, 魏敬和, 许居衍. 超薄基区SiGe HBT电流传输模型[J]. 半导体学报(英文版), 2000, 21(1): 97-101.
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      • Received Date: 2015-08-20

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