Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 38-43
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经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性

刘小兵 , 熊祖洪 , 史向华 , 袁帅 and 廖良生

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Key words: 多孔硅, 光致发光, 钝化, Al_2O_3, SiO_x

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 38-43
      刘小兵, 熊祖洪, 史向华, 袁帅, 廖良生. 经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性[J]. 半导体学报(英文版), 2000, 21(1): 38-43.
      Citation:
      刘小兵, 熊祖洪, 史向华, 袁帅, 廖良生. 经Al_2O_3与SiO_x钝化的多孔硅及其光致发光特性[J]. 半导体学报(英文版), 2000, 21(1): 38-43.
      shu

      • Received Date: 2015-08-20

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