An 8W X Band AlGaN/GaN Power HEMT

Liu Guoguo; Zheng Yingkui; Wei Ke; Li Chengzhan; Liu Xinyu; He Zhijing

J. Semicond. > 2008, Volume 29 > Issue 7 > 1354-1356

PAPERS

An 8W X Band AlGaN/GaN Power HEMT

Liu Guoguo, Zheng Yingkui, Wei Ke, Li Chengzhan, Liu Xinyu and He Zhijing

+ Author Affiliations

Abstract: AlGaN/GaN HEMTs at the X band based on homemade SiC substrates and homemade epi-layers are first reported.A 0.35μm gate length,1mm gate width microwave power device is produced with a gate-connected field plate.The power device exhibits a maximum drain current density as high as 0.83A/mm and a peak extrinsic transconductance of 236mS/mm.A unity current gain cutoff frequency(fT) of 30GHz and a power gain cutoff frequency of 31GHz are obtained.The device biased at a drain voltage of 40V demonstrates a continuous wave saturated output power of 8W with a gain of 4.9dB and a power-added efficiency of 45% at 8GHz.

Key words: AlGaN/GaN, HEMT, microwave power, gate-connected field plate

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20	Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2396-2400.

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Received: 18 August 2015 Revised: 20 December 2007 Online: Published: 01 July 2008

AlGaN/GaN HEMTs at the X band based on homemade SiC substrates and homemade epi-layers are first reported.A 0.35μm gate length,1mm gate width microwave power device is produced with a gate-connected field plate.The power device exhibits a maximum drain current density as high as 0.83A/mm and a peak extrinsic transconductance of 236mS/mm.A unity current gain cutoff frequency(fT) of 30GHz and a power gain cutoff frequency of 31GHz are obtained.The device biased at a drain voltage of 40V demonstrates a continuous wave saturated output power of 8W with a gain of 4.9dB and a power-added efficiency of 45% at 8GHz.

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