Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 662-667
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重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷

黄笑容 , 杨德仁 , 沈益军 , 王飞尧 , 马向阳 , 李立本 and 阙端麟

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Key words: 重掺杂直拉硅, 氧沉淀, 缺陷

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 662-667
      黄笑容, 杨德仁, 沈益军, 王飞尧, 马向阳, 李立本, 阙端麟. 重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷[J]. 半导体学报(英文版), 2004, 25(6): 662-667.
      Citation:
      黄笑容, 杨德仁, 沈益军, 王飞尧, 马向阳, 李立本, 阙端麟. 重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷[J]. 半导体学报(英文版), 2004, 25(6): 662-667.
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      • Received Date: 2015-08-19

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