Chin. J. Semicond. > 1994, Volume 15 > Issue 11 > 759-761
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K对H2O在Si（001）表面上吸附的影响

李海洋，范朝阳，徐亚伯

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Abstract:

在Ｓｉ（００１）－２×１表面上沉积碱金属Ｋ，接着在室温下吸附一定量的Ｈ２Ｏ，光电子谱证明：Ｋ的存在有促进Ｈ２Ｏ分解和使Ｓｉ氧化的作用．但其作用是局域在Ｋ原子附近的．

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(11): 759-761
      李海洋，范朝阳，徐亚伯. K对H2O在Si（001）表面上吸附的影响[J]. 半导体学报(英文版), 1994, 15(11): 759-761.
      Citation:
      李海洋，范朝阳，徐亚伯. K对H2O在Si（001）表面上吸附的影响[J]. 半导体学报(英文版), 1994, 15(11): 759-761.
      shu

      • Received Date: 2015-08-19

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