Chin. J. Semicond. > 1998, Volume 19 > Issue 1 > 66-771
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导纳谱研究锗硅单量子阱的退火效应

柯炼 , 林峰 , 张胜坤 , 谌达宇 , 陆昉 and 王迅

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(1): 66-771
      柯炼, 林峰, 张胜坤, 谌达宇, 陆昉, 王迅. 导纳谱研究锗硅单量子阱的退火效应[J]. 半导体学报(英文版), 1998, 19(1): 66-771.
      Citation:
      柯炼, 林峰, 张胜坤, 谌达宇, 陆昉, 王迅. 导纳谱研究锗硅单量子阱的退火效应[J]. 半导体学报(英文版), 1998, 19(1): 66-771.
      shu

      • Received Date: 2015-08-20

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