Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 57-60
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非晶硅薄膜的镍诱导横向晶化工艺及其特性

秦明 and VincentM C Poon

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Key words: 镍, 非晶硅, 晶化

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    Yan Bo, Zhang Kuangji, Shi Yi, Pu Lin, 韩平, Han Ping, Zhang Rong. Characteristics of Ge-Dots/Si Multilayered Structure Fabricatedby Ni-Based Metal Induced Lateral Crystallization[J]. Journal of Semiconductors, 2006, 27(4): 712-716.
    Yan B, Zhang K J, Shi Y, Pu L, Han P, Zhang R. Characteristics of Ge-Dots/Si Multilayered Structure Fabricatedby Ni-Based Metal Induced Lateral Crystallization[J]. Chin. J. Semicond., 2006, 27(4): 712.
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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 57-60
      Yan Bo, Zhang Kuangji, Shi Yi, Pu Lin, 韩平, Han Ping, Zhang Rong. Characteristics of Ge-Dots/Si Multilayered Structure Fabricatedby Ni-Based Metal Induced Lateral Crystallization[J]. Journal of Semiconductors, 2006, 27(4): 712-716. ****Yan B, Zhang K J, Shi Y, Pu L, Han P, Zhang R. Characteristics of Ge-Dots/Si Multilayered Structure Fabricatedby Ni-Based Metal Induced Lateral Crystallization[J]. Chin. J. Semicond., 2006, 27(4): 712.
      Citation:
      秦明, VincentM C Poon. 非晶硅薄膜的镍诱导横向晶化工艺及其特性[J]. 半导体学报(英文版), 2001, 22(1): 57-60.
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      • Received Date: 2015-08-19

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